Structure of the P-b center: ENDOR investigation

被引：3

作者：

Bratus, VY

Ishchenko, SS

Okulov, SM

Vorona, IP

vonBardeleben, HJ

机构：

[1] UNIV PARIS 06,PHYS SOLIDES GRP,F-75005 PARIS 05,FRANCE

[2] UNIV PARIS 07,CNRS,URA 17,F-75005 PARIS 05,FRANCE

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

(111) Si-SiO2 interface; Pb center; porous silicon; ENDOR; hyperfine interaction;

D O I：

10.4028/www.scientific.net/MSF.196-201.529

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The P-b center at the (111) Si-SiO2 interface in porous silicon has been investigated by electron-nuclear double resonance (ENDOR). New ENDOR spectrum has been revealed caused by superhyperfine (SHF) interaction of the P-b center with nuclei of hydrogen atoms which passivate the dangling bonds of three next-nearest-neibour shells at the interfacial plane. The isotropic SHF constant a and the anisotropic SHF constant b have been evaluated for these shells. The thermal stability of the P-b center environment is discussed.

引用

收藏

页码：529 / 534

页数：6

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