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Epitaxial Si/SiO2 low dimensional structures

被引：8
作者：
Ishikawa, Y
Shibata, N
Fukatsu, S
机构：
[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 456, Japan
[2] Univ Tokyo, Dept Pure & Appl Sci, Meguro Ku, Tokyo 153, Japan
来源：
THIN SOLID FILMS | 1998年 / 321卷
基金：
日本科学技术振兴机构;
关键词：
molecular beam epitaxy; Si/SiO2; low dimensional structures;
D O I：
10.1016/S0040-6090(98)00479-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fabrication of epitaxial Si/SiO2 low dimensional structures using in situ multiple low energy oxygen implantation in combination with Si molecular beam epitaxy is described, highlighting its potential for the control of quantum confinement structures. Highly-oriented Si nanodots and Si quantum wires embedded in SiO2 are demonstrated as prominent examples and the formation mechanism of the epitaxial Si/SiO2 bilayer is described. Successful growth of epi-ready Si/SiO2 Bragg reflector is demonstrated in view of optoelectronic application. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：234 / 240
页数：7
相关论文
共 28 条
[11]  
ISHIKAWA Y, 1998, IN PRESS APPL PHYS L, V72
[12]   CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].
IZUMI, K ;
DOKEN, M ;
ARIYOSHI, H .
ELECTRONICS LETTERS, 1978, 14 (18) :593-594
[13]   LUMINESCENCE PROPERTIES OF NANOMETER-SIZED SI CRYSTALLITES - CORE AND SURFACE-STATES [J].
KANEMITSU, Y .
PHYSICAL REVIEW B, 1994, 49 (23) :16845-16848
[14]   Quantum confined luminescence in Si/SiO2 superlattices [J].
Lockwood, DJ ;
Lu, ZH ;
Baribeau, JM .
PHYSICAL REVIEW LETTERS, 1996, 76 (03) :539-541
[15]   VISIBLE PHOTOLUMINESCENCE OF GE MICROCRYSTALS EMBEDDED IN SIO2 GLASSY MATRICES [J].
MAEDA, Y ;
TSUKAMOTO, N ;
YAZAWA, Y ;
KANEMITSU, Y ;
MASUMOTO, Y .
APPLIED PHYSICS LETTERS, 1991, 59 (24) :3168-3170
[16]  
MORISAKI H, 1993, APPL PHYS LETT, V64, P2977
[17]  
NAMAVAR F, 1992, MATER RES SOC SYMP P, V235, P109
[18]   ON THE FORMATION OF THICK AND MULTIPLE LAYER SIMOX STRUCTURES AND THEIR APPLICATIONS [J].
NAMAVAR, F ;
CORTESI, E ;
SOREF, RA ;
SIOSHANSI, P .
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 :241-246
[19]   FORMATION OF THIN SILICON FILMS USING LOW-ENERGY OXYGEN ION-IMPLANTATION [J].
ROBINSON, AK ;
MARSH, CD ;
BUSSMANN, U ;
KILNER, JA ;
LI, Y ;
VANHELLEMONT, J ;
REESON, KJ ;
HEMMENT, PLF ;
BOOKER, GR .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :555-560
[20]   LIGHT-EMITTING NANOCRYSTALLINE SILICON PREPARED BY DRY PROCESSING - THE EFFECT OF CRYSTALLITE SIZE [J].
RUCKSCHLOSS, M ;
LANDKAMMER, B ;
VEPREK, S .
APPLIED PHYSICS LETTERS, 1993, 63 (11) :1474-1476
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