Cathodoluminescence study on ZnO and GaN

被引：8

作者：

Sekiguchi, T ^{[1
]}

Ohashi, N

Yamane, H

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tokyo Inst Technol, Dept Inorgan Mat, Tokyo 1528552, Japan

[3] Tohoku Univ, Inst Adv Mat Proc, Sendai, Miyagi 9808577, Japan

来源：

SOLID STATE PHENOMENA | 1998年 / 63-4卷

关键词：

cathodoluminescence; ZnO; GaN; flux growth; excitonic luminescence; visible emission; hydrogen passivation;

D O I：

10.4028/www.scientific.net/SSP.63-64.171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.

引用

页码：171 / 181

页数：11

共 17 条

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