Ion-assisted nucleation and growth of GaN on sapphire(0001)

被引：24

作者：

Headrick, RL ^{[1
]}

Kycia, S

Woll, AR

Brock, JD

Murty, MVR

机构：

[1] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.4818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire(0001) by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga(C2H5)(3) exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx+ ions and Ga(C2H5)(3) exhibited layer-by-layer intensity oscillations with maxima near odd-integer bilayers. The mode of nucleation is controlled by the Ga incorporation efficiency on the substrate and GaN islands. The Ga incorporation efficiency on the substrate is increased by a factor of 4 by low-energy ion irradiation during growth.

引用

页码：4818 / 4824

页数：7

共 44 条

[21] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].

HOUZAY, F ;

GUILLE, C ;

MOISON, JM ;

HENOC, P ;

BARTHE, F .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72

[22] Molecular beam epitaxy growth and properties of GaN, AlxGa1-xN, and AlN on GaN/SiC substrates [J].

Johnson, MAL ;

Fujita, S ;

Rowland, WH ;

Bowers, KA ;

Hughes, WC ;

He, YW ;

ElMasry, NA ;

Cook, JW ;

Schetzina, JF ;

Ren, J ;

Edmond, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2349-2353

[23] Critical thickness of GaN thin films on sapphire(0001) [J].

Kim, C ;

Robinson, IK ;

Myoung, J ;

Shim, K ;

Yoo, MC ;

Kim, K .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2358-2360

[24]

KOCH SM, 1987, J CRYST GROWTH, V81, P67

[25] MICROSTRUCTURE AND STRAIN RELIEF OF GE FILMS GROWN LAYER BY LAYER ON SI(001) [J].

LEGOUES, FK ;

COPEL, M ;

TROMP, RM .

PHYSICAL REVIEW B, 1990, 42 (18) :11690-11700

[26] IMPROVEMENTS IN THE HETEROEPITAXY OF GAAS ON SI [J].

LUM, RM ;

KLINGERT, JK ;

DAVIDSON, BA ;

LAMONT, MG .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :36-38

[27]

MIRECKIMILLUNCH.J, 1994, APPL PHYS LETT, V65, P1136

[28]

MO YW, 1990, PHYS REV LETT, V65, P1020, DOI 10.1142/S0217984990001732

[29] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[30] GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

PAISLEY, MJ ;

SITAR, Z ;

POSTHILL, JB ;

DAVIS, RF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :701-705

← 1 2 3 4 5 →