Recombination in HgGaInS4 single crystals

被引：31

作者：

Anedda, A

Casu, MB

Serpi, A

Burlakov, II

Tiginyanu, IM

Ursaki, VV

机构：

[1] UNIV CAGLIARI, DIPARTIMENTO SCI FIS, INFM, I-09100 CAGLIARI, ITALY

[2] MOLDAVIAN ACAD SCI, INST PHYS APPL, KISHINEV, MOLDOVA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1997年 / 58卷 / 02期

关键词：

semiconductors; photoelectron spectroscopy; luminescence;

D O I：

10.1016/S0022-3697(96)00124-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV\decade as well as a further electron trap system with an activation energy of 70 meV have been localized below the bottom of the conduction band. Radiative electron transitions are shown to occur mainly from exponentially distributed traps to an acceptor level characterized by an activation energy of 220 meV. (C) 1997 Elsevier Science Ltd. All rights reserved.

引用

页码：325 / 330

页数：6

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