Ultra low noise CMOS preamplifier-shaper for X-ray spectroscopy

被引:29
作者
O'Connor, P
Gramegna, G
Rehak, P
Corsi, F
Marzocca, C
机构
[1] Politecn Bari, Dipartimento Elettrotecn & Elettron, I-70100 Bari, Italy
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
关键词
CMOS preamplifier-shaper; X-ray spectroscopy; adaptive pole-zero suppression; adaptive bias circuit; best reported noise performance in CMOS;
D O I
10.1016/S0168-9002(97)01289-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report here an Ultra Low Noise CMOS charge-sensitive amplifier (CSA) and a CSA-Shaper for X-ray spectroscopy, suitable for a small anode capacitance, low leakage current solid state detector. The continuously sensitive CSA and CSA-Shaper use a MOS transistor MF to discharge the integration capacitance; a novel self-bias circuit biases MF in the G Ohm region (subthreshold region) while tracking process, temperature and supply voltage variations. A T-Network in the DC-feedback improves the CSA gain linearity (within 0.1% up to 1.8 fC input charge). The CSA-Shaper features a novel Adaptive Pole-Zero cancellation scheme: the Zero in the Shaper adapts itself statically and dynamically to cancel the CSA Pole. The noise performance of the CSA has been measured: with no detector connected and MF pinched, the room-temperature equivalent noise charge (ENC) is 9e rms at 12 mu s shaping time. When connected to a cooled detector (T = - 75 degrees C), with MF in pinch off, an ENC of 13e rms is achieved (FHWM = 111 eV) at 2.4 mu s shaping time. This is the best reported energy resolution ever obtained with a CMOS preamplifier. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:315 / 321
页数:7
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