Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure

被引：25

作者：

Morita, D ^{[1
]}

Sano, M ^{[1
]}

Yamamoto, M ^{[1
]}

Nonaka, M ^{[1
]}

Yasutomo, K ^{[1
]}

Akaishi, K ^{[1
]}

Nagahama, S ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 200卷 / 01期

关键词：

D O I：

10.1002/pssa.200303395

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have remarkably improved the emission efficiency of 365 nm ultraviolet (UV) light emitting diode (LED). Rugged pattern is fabricated on the surface of LED chips in order to enhance the extraction efficiency. As a result, the extraction efficiency of this LED approximately increased by 50%. When this UV LED was operated at a forward-bias pulsed current of 500 mA at room temperature (RT), the peak wavelength, the output power (P-O), the operating voltage (V-f) and the external quantum efficiency (eta(ex)) were 365 mn, 240 mW, 4.5 V and 14.1 %, respectively. On the other hand, at a forward-bias direct current of 500 mA at RT, P-O, V-f and eta(ex) were 210 mW, 4.3 V and 12.4%, respectively. The eta(ex) at 365 mn increased to double that of the reported value before.

引用

页码：114 / 117

页数：4

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