Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor deposition

被引：19

作者：

Yugo, S ^{[1
]}

Nakamura, N ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Univ Electrocommun, Chofu, Tokyo 182, Japan

来源：

关键词：

heteroepitaxial mechanism; bias treatment;

D O I：

10.1016/S0925-9635(98)00154-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we observed the effects of bias treatment on the hetero-epitaxial growth of diamond on Si substrates using FE-SEM and X-TEM. Then, we investigated the mechanism of the epitaxial growth of diamond, taking into account the nucleus generation model which we reported on previously. In our model, we assumed that migration and rotation of nuclei occur easily on Si substrates under low-energy-ion irradiation, similarly to in cases using noble metals, since the initial clusters on the Si substrates are embryonic. The results indicated that diamond growth on Si substrate follows a semi-graphoepitaxial growth pattern due to the transfer of information regarding the surface morphology of the substrate and crystal direction to the nuclei. In addition, we explained the mechanism of epitaxial growth of diamond via interlayers using an embryonic cluster model. (C) 1998 Elsevier Science S.A.

引用

页码：1017 / 1020

页数：4

共 16 条

[1] INFLUENCE OF SUBSTRATE TOPOGRAPHY ON THE NUCLEATION OF DIAMOND THIN-FILMS [J].