A silicon bipolar transmitter front-end for 802.11a and HIPERLAN2 wireless LANs

被引：9

作者：

Italia, A ^{[1
]}

La Paglia, L

Scuderi, A

Carrara, F

Ragonese, E

Palmisano, G

机构：

[1] Catania Univ, Fac Ingn, Dipartimento Ingn Electtron Sistemi, I-95125 Catania, Italy

[2] STMicroelect Srl, I-95121 Catania, Italy

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 07期

关键词：

HIPERLAN2; orthogonal frequency division multiplexing (OFDM); radio transmitter; silicon bipolar technology; wireless local area network (WLAN); 802.11a;

D O I：

10.1109/JSSC.2005.847327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 5-GHz transmitter front-end for 802.11a and HIPERLAN2 wireless local area networks was implemented in a low-cost 46-GHz-f(T) silicon bipolar technology. The transmitter includes a digitally controlled linear-in-dB variable-gain up-converter and a three-stage linear power amplifier. At a 3-V supply voltage, the front-end exhibits a 23.5-dBm output 1-dB compression point, 35-dB maximum power gain, and 30-dB dynamic range. The dB-linear gain error is lower than +/- 0.8 dB. The transmitter is able to comply with the stringent error vector magnitude requirement of the standard up to a 19-dBm output power level.

引用

页码：1451 / 1459

页数：9

共 29 条

[1] A single-stage variable-gain amplifier with 70-dB dynamic range for CDMA2000 transmit applications [J].

Aggarwal, S ;

Khosrowbeygi, A ;

Daanen, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (06) :911-917

[2] A single chip CMOS transceiver for 802.11 a/b/g WLANs [J].

Ahola, R ;

Aktas, A ;

Wilson, J ;

Rao, KR ;

Jonsson, F ;

Hyyryläinen, I ;

Brolin, A ;

Hakala, T ;

Friman, A ;

Mäkiniemi, T ;

Hanze, J ;

Sanden, M ;

Wallner, D ;

Guo, YX ;

Lagerstam, T ;

Noguer, L ;

Knuuttilal, T ;

Olofsson, P ;

Ismail, M .

2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :92-93

[3]

[Anonymous], 1999, 80211 IEEE

[4]

Aparin V, 1999, IEEE MTT S INT MICR, P977, DOI 10.1109/MWSYM.1999.779549

[5] A fully integrated 5.3-GHz 2.4-v 0.3-W SiGe bipolar power amplifier with 50-Ω output [J].

Bakalski, W ;

Simbürger, W ;

Thüringer, R ;

Vasylyev, A ;

Scholtz, AL .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (07) :1006-1014

[6] A 5-GHz direct-conversion CMOS transceiver utilizing automatic frequency control for the IEEE 802.11a wireless LAN standard [J].

Behzad, AR ;

Shi, ZM ;

Anand, SB ;

Lin, L ;

Carter, KA ;

Kappes, MS ;

Lin, TH ;

Nguyen, T ;

Yuan, D ;

Wu, S ;

Wong, YC ;

Fong, V ;

Rofougaran, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (12) :2209-2220

[7] A silicon bipolar technology for high-efficiency power applications up to C-band [J].

Biondi, T ;

Carrara, F ;

Scuderi, A ;

Palmisano, G .

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, :155-158

[8] A 1.8-GHz high-efficiency 34-dBm silicon bipolar power amplifier [J].

Carrara, F ;

Scuderi, A ;

Biondi, T ;

Palmisano, G .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (12) :2963-2970

[9] A comprehensive explanation of distortion sideband Asymmetries [J].

de Carvalho, NB ;

Pedro, JC .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (09) :2090-2101

[10]

*ETSI TS, 2001, 101475 ETSI TS

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