A fully integrated 5.3-GHz 2.4-v 0.3-W SiGe bipolar power amplifier with 50-Ω output

被引：34

作者：

Bakalski, W ^{[1
]}

Simbürger, W

Thüringer, R

Vasylyev, A

Scholtz, AL

机构：

[1] Infineon Corp Res, D-81739 Munich, Germany

[2] Tech Univ Brandenburg, A-03046 Cottbus, Austria

[3] Vienna Univ Technol, Inst Commun & Radio Frequency, A-1040 Vienna, Austria

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 07期

关键词：

Balun; power-added efficiency (PAE); power amplifier; transformer; wireless LAN;

D O I：

10.1109/JSSC.2004.829967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-mum SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%.

引用

页码：1006 / 1014

页数：9

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