Microstructure of epitaxial α-Fe2O3 grains in Ba-ferrite thin films grown on sapphire (001)

被引:15
作者
Cho, TS [1 ]
Doh, SJ
Je, JH
Noh, DY
机构
[1] POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea
[3] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 506712, South Korea
关键词
D O I
10.1063/1.123753
中图分类号
O59 [应用物理学];
学科分类号
摘要
We revealed the existence of epitaxial alpha-Fe2O3 grains in Ba-ferrite thin films on sapphire (001) using synchrotron x-ray scattering. The antiferromagnetic alpha-Fe2O3 grains were formed during the crystallization of amorphous Ba-ferrite films grown on sapphire (001) by radio frequency sputtering deposition. The crystal domain size of the alpha-Fe2O3 grains was about 250 Angstrom in the film plane, similar to that of the Ba-ferrite grains. The in-plane crystalline axis of the alpha-Fe2O3 was aligned to that of sapphire, while the Ba-ferrite film was rotated by 30 degrees in the film plane. We confirm that the existence of these antiferromagnetic alpha-Fe2O3 grains greatly degraded magnetic properties of the Ba-ferrite films. (C) 1999 American Institute of Physics. [S0003-6951(99)03414-2].
引用
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页码:2050 / 2052
页数:3
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