Theoretical investigation of mid-infrared interband cascade lasers based on type II quantum wells

被引：33

作者：

Mu, YM ^{[1
]}

Yang, RQ ^{[1
]}

机构：

[1] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.368789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band structures and optical gain in mid-infrared type II InAs/GaInSb/AlSb interband cascade lasers were investigated using an eight-band k.p model. Threshold carrier densities with different electric fields were obtained at 80 and 300 K. Implications of the calculated results on device performance are discussed. (C) 1998 American Institute of Physics. [S0021-8979(98)06821-2].

引用

页码：5357 / 5359

页数：3

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