Approaching the intrinsic band gap in suspended high-mobility graphene nanoribbons

被引：39

作者：

Lin, Ming-Wei ^{[1
]}

Ling, Cheng ^{[1
]}

Agapito, Luis A. ^{[2
]}

Kioussis, Nicholas ^{[2
]}

Zhang, Yiyang ^{[1
,3
]}

Cheng, Mark Ming-Cheng ^{[3
]}

Wang, Wei L. ^{[4
,5
]}

Kaxiras, Efthimios ^{[4
,5
]}

Zhou, Zhixian ^{[1
]}

机构：

[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA

[2] Calif State Univ Northridge, Dept Phys, Northridge, CA 91330 USA

[3] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[4] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[5] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.84.125411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon (GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm(2) V-1 s(-1) and an intrinsic band gap. The experimentally derived band gap is in quantitative agreement with the results of our electronic structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the band gap in nonarmchair GNRs is partially due to the magnetic zigzag edges.

引用

页数：7

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