Crystal structure of the high-pressure phase silicon VI

被引:173
作者
Hanfland, M
Schwarz, U
Syassen, K
Takemura, K
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[3] Natl Inst Res Inorgan Mat, Ibaraki, Osaka 3050044, Japan
关键词
D O I
10.1103/PhysRevLett.82.1197
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The crystal structure of Si was studied at pressures between 30 and 50 GPa using high-resolution monochromatic synchrotron x-ray diffraction. The powder diffraction patterns of the phase Si VI are indexed on the basis of an orthorhombic unit cell containing 16 atoms. The space group is assigned as Cmca. Full profile refinements reveal that Si VI is isotypic to Cs V; i.e., axial ratios and atomic coordinates are nearly identical for both phases. Thus, formation of the Cs V type structure is not a unique feature of the pressure-driven electronic s-d transition in Cs. Instead, the structure type appears to be more common, occurring intermediate between 8- and 12-fold coordinated structures. [S0031-9007(98)08345-8].
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页码:1197 / 1200
页数:4
相关论文
共 31 条
[11]   CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J].
JAMIESON, JC .
SCIENCE, 1963, 139 (355) :762-&
[12]  
Larson A., 86748 LAUR LOS AL NA
[13]   THEORETICAL-STUDY OF HIGH-PRESSURE ORTHORHOMBIC SILICON [J].
LEWIS, SP ;
COHEN, ML .
PHYSICAL REVIEW B, 1993, 48 (21) :16144-16147
[14]   PRESSURE-INDUCED SUPERCONDUCTIVITY IN HIGH-PRESSURE PHASES OF SI [J].
LIN, TH ;
DONG, WY ;
DUNN, KJ ;
WAGNER, CNJ ;
BUNDY, FP .
PHYSICAL REVIEW B, 1986, 33 (11) :7820-7822
[15]   CALIBRATION OF THE RUBY PRESSURE GAUGE TO 800-KBAR UNDER QUASI-HYDROSTATIC CONDITIONS [J].
MAO, HK ;
XU, J ;
BELL, PM .
JOURNAL OF GEOPHYSICAL RESEARCH-SOLID EARTH AND PLANETS, 1986, 91 (B5) :4673-4676
[16]   NEW HIGH-PRESSURE PHASE OF SI [J].
MCMAHON, MI ;
NELMES, RJ .
PHYSICAL REVIEW B, 1993, 47 (13) :8337-8340
[17]   PROPERTIES OF SUPERCONDUCTING HIGH-PRESSURE PHASES OF SILICON [J].
MIGNOT, JM ;
CHOUTEAU, G ;
MARTINEZ, G .
PHYSICAL REVIEW B, 1986, 34 (05) :3150-3155
[18]   PRESSURE INDUCED PHASE TRANSITIONS IN SILICON, GERMANIUM AND SOME 3-5 COMPOUNDS [J].
MINOMURA, S ;
DRICKAMER, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (MAY) :451-&
[19]   TRANSITION FROM BETA-TIN TO SIMPLE HEXAGONAL SILICON UNDER PRESSURE [J].
NEEDS, RJ ;
MARTIN, RM .
PHYSICAL REVIEW B, 1984, 30 (09) :5390-5392
[20]   FIRST-PRINCIPLES PSEUDOPOTENTIAL STUDY OF THE STRUCTURAL PHASES OF SILICON [J].
NEEDS, RJ ;
MUJICA, A .
PHYSICAL REVIEW B, 1995, 51 (15) :9652-9660