Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices

被引：24

作者：

Waldron, EL

Li, YL

Schubert, EF

Graff, JW

Sheu, JK

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02155 USA

[3] Natl Cent Univ, Ctr Opt Sci, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 24期

关键词：

D O I：

10.1063/1.1631382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Perpendicular transport characteristics of n-type AlxGa1-xN/GaN superlattices are presented. Planar and mesa-etched superlattice structures are employed to identify the perpendicular resistance. Perpendicular transport measurements in Al0.22Ga0.78N/GaN superlattices display linear current-voltage characteristics with a resistivity that is a factor of 6.6 higher than for bulk material. A theoretical model is developed for perpendicular transport in AlxGa1-xN/GaN superlattices based on sequential tunneling. The model shows that short superlattice periods are required to minimize the perpendicular resistivity. (C) 2003 American Institute of Physics.

引用

页码：4975 / 4977

页数：3

共 8 条

[1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].