Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices

被引：69

作者：

Waldron, EL ^{[1
]}

Graff, JW

Schubert, EF

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Boston Univ, Dept Phys, Boston, MA 02215 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 17期

关键词：

D O I：

10.1063/1.1410340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport properties of modulation, shifted modulation, and uniformly doped Al0.20Ga0.80N/GaN superlattices are presented. The modulation-doped sample is doped only in the AlGaN barriers. The shifted-modulation-doped sample has its dopants shifted by one-quarter period. Measurements reveal a strong improvement in mobility and resistivity for the modulation-doped and shifted-modulation-doped structures versus the uniformly doped structure. The modulation-doped sample has a mobility of 9.2 and 36 cm(2)/V s at 300 and 90 K respectively and a very low resistivity of 0.20 and 0.068 Omega cm at 300 and 90 K, respectively. Capacitance-voltage profiling shows multiple two-dimensional hole gases. The results are consistent with a reduction of neutral impurity scattering for modulation-doped structures as compared to uniformly doped structures. (C) 2001 American Institute of Physics.

引用

页码：2737 / 2739

页数：3

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