Determination of intrinsic barrier height in the Au/n-GaN contact system

被引：32

作者：

Noh, SK ^{[1
]}

Bhattacharya, P

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Korea Res Inst Stand & Sci, Epitaxial Semicond Grp, Taejon 305600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 23期

关键词：

D O I：

10.1063/1.1377848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the intrinsic Schottky barrier height of Au/n-GaN metal-semiconductor diodes by performing current-voltage measurement on a series of diodes with varying in the range 10(17)-10(19) cm(-3) in the GaN layer. The effective barrier height (Phi (B)) monotonically decreases with increasing doping level. Taking account of the image-charge lowering (Delta Phi), the intrinsic barrier height Phi (B0)=Phi (B)+Delta Phi, is almost constant at (0.934 +/-0.015) V up to similar to 5x10(18) cm(-3), which is close to the Schottky limit of 0.94 V. (C) 2001 American Institute of Physics.

引用

页码：3642 / 3644

页数：3

共 18 条

[1]

[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0

[2] High voltage (450 V) GaN schottky rectifiers [J].

Bandic, ZZ ;

Bridger, PM ;

Piquette, EC ;

McGill, TC ;

Vaudo, RP ;

Phanse, VM ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1266-1268

[3] ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES [J].

CHIN, VWL ;

TANSLEY, TL ;

OSTOCHAN, T .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7365-7372

[4]

Chyi JI, 1999, MRS INTERNET J N S R, V4

[5] SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY [J].

HACKE, P ;

DETCHPROHM, T ;

HIRAMATSU, K ;

SAWAKI, N .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2676-2678

[6] Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation [J].

Lee, IH ;

Choi, IH ;

Lee, CR ;

Noh, SK .

APPLIED PHYSICS LETTERS, 1997, 71 (10) :1359-1361

[7] A review of the metal-GaN contact technology [J].

Liu, QZ ;

Lau, SS .

SOLID-STATE ELECTRONICS, 1998, 42 (05) :677-691

[8] Near-ideal platinum-GaN Schottky diodes [J].

Mohammad, SN ;

Fan, Z ;

Botchkarev, AE ;

Kim, W ;

Aktas, O ;

Salvador, A ;

Morkoc, H .

ELECTRONICS LETTERS, 1996, 32 (06) :598-599

[9] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

[10]

Park YS, 1999, J KOREAN PHYS SOC, V34, pS199

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