Determination of intrinsic barrier height in the Au/n-GaN contact system

被引：32

作者：

Noh, SK ^{[1
]}

Bhattacharya, P

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Korea Res Inst Stand & Sci, Epitaxial Semicond Grp, Taejon 305600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 23期

关键词：

D O I：

10.1063/1.1377848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the intrinsic Schottky barrier height of Au/n-GaN metal-semiconductor diodes by performing current-voltage measurement on a series of diodes with varying in the range 10(17)-10(19) cm(-3) in the GaN layer. The effective barrier height (Phi (B)) monotonically decreases with increasing doping level. Taking account of the image-charge lowering (Delta Phi), the intrinsic barrier height Phi (B0)=Phi (B)+Delta Phi, is almost constant at (0.934 +/-0.015) V up to similar to 5x10(18) cm(-3), which is close to the Schottky limit of 0.94 V. (C) 2001 American Institute of Physics.

引用

页码：3642 / 3644

页数：3

共 18 条

[11] Semiconductor ultraviolet detectors [J].

Razeghi, M ;

Rogalski, A .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7433-7473

[12] Schottky barrier properties of various metals on n-type GaN [J].

Schmitz, AC ;

Ping, AT ;

Khan, MA ;

Chen, Q ;

Yang, JW ;

Adesida, I .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (10) :1464-1467

[13]

Schmitz AC, 1996, MATER RES SOC SYMP P, V395, P831

[14] Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN [J].

Sheu, JK ;

Su, YK ;

Chi, GC ;

Jou, MJ ;

Chang, CM .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3317-3319

[15] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

[16]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P250

[17] Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates [J].

Yu, LS ;

Qiao, DJ ;

Xing, QJ ;

Lau, SS ;

Boutros, KS ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :238-240

[18] High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching [J].

Zhu, TG ;

Lambert, DJH ;

Shelton, BS ;

Wong, MM ;

Chowdhury, U ;

Dupuis, RD .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2918-2920

← 1 2 →