Effects of surface oxide on the rapid thermal nitridation of Si(001)

被引：9

作者：

Copel, M

Tromp, RM

Timme, HJ

Penner, K

Nakao, T

机构：

[1] IBM CORP,SEMICOND RES & DEV CTR,SIEMENS COMPONENTS,HOPEWELL JCT,NY 12533

[2] IBM CORP,SEMICOND RES & DEV CTR,TOSHIBA,HOPEWELL JCT,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.580106

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the role of surface oxygen on the rapid thermal nitridation of Si(001) by NH3 using medium energy ion scattering. For short times, typical of rapid thermal processing, monolayer quantities of oxygen are sufficient to reduce nitridation. The oxide remains on the surface after nitridation, which may adversely influence subsequent nitride chemical vapor deposition. (C) 1996 American Vacuum Society.

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页码：462 / 464

页数：3

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