A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity

被引：2

作者：

Fu, DJ ^{[1
]}

Yuldashev, SU

Kim, NH

Ryu, YS

Yun, JS

Park, SH

Kang, TW

Chung, KS

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Kyung Hee Univ, Dept Elect Engn, Yongin Kun 499701, Kyungki Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 1AB期

关键词：

GaN; photoelectrochemical oxidation; photoconductivity; defect; passivation;

D O I：

10.1143/JJAP.40.L10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN epilayers grown on sapphire substrates by molecular-beam epitaxy were oxidized by photoelectrochemical (PEC) treatment in KOH, The effect of the oxidation on the GaN surface was investigated by extrinsic photoconductivity. The PEG-treated samples show decreased photoresponse and relaxation time compared with those of the as-grown sample. The concentration of deep states in the epilayers as determined from the light-intensity dependence of rise and decay times is reduced after PEC oxidation. The results suggest that the defective bonds at the surface are effectively saturated by oxygen coverage during PEC growth of the oxide layer. Results of temperature-dependent photoconductivity measurement reveal that shallow levels are also passivated within a short time of PEC treatment.

引用

页码：L10 / L12

页数：3

共 16 条

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