Interdigitated terahertz emitters

被引：13

作者：

Acuna, G. P. ^{[1
]}

Buersgens, F. F. ^{[1
]}

Lang, C. ^{[1
]}

Handloser, M. ^{[1
]}

Guggenmos, A. ^{[1
]}

Kersting, R. ^{[1
]}

机构：

[1] Univ Munich, Photon & Optoelect Grp, D-80799 Munich, Germany

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 03期

关键词：

D O I：

10.1049/el:20082905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large aperture terahertz (THz) emitter is presented. The planar photoconducting GaAs device consists of a periodical interdigitated Schottky structure. Additional trenches in the GaAs have double periodicity. They are required for far-field THz emission. Terahertz field strengths of 15 V/cm were achieved.

引用

页码：229 / 230

页数：2

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