Temperature dependent structural changes of graphene layers on 6H-SiC(0001) surfaces

被引：28

作者：

Kim, Ki-jeong ^{[1
,2
,3
]}

Lee, Hangil ^{[1
]}

Choi, J-H ^{[2
,3
]}

Lee, H-K ^{[4
]}

Kang, T-H ^{[1
]}

Kim, B. ^{[1
,4
]}

Kim, Sehun ^{[2
,3
]}

机构：

[1] POSTECH, Beamline Res Div, Pohang Accelerator Lab, Pohang 790784, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

[3] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea

[4] POSTECH, Dept Phys, Pohang 790784, Kyungbuk, South Korea

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 22期

关键词：

D O I：

10.1088/0953-8984/20/22/225017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigated the electronic and structural properties of graphene layers grown on a 6H-SiC (Si-terminated) substrate by using core level photoemission spectroscopy (CLPES), low energy electron diffraction (LEED), and near edge x-ray absorption fine structure (NEXAFS). The angle between the plane of the graphene sheet and the SiC substrate was measured by monitoring the variation of the pi* transition in the NEXAFS spectrum with the thickness of the graphene layers. As the thickness of the graphene layers increased, the angle gradually decreased.

引用

页数：5

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