MOS characteristics of ultrathin CVD HfAlO gate dielectrics

被引：69

作者：

Bae, SH ^{[1
]}

Lee, CH ^{[1
]}

Clark, R ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期

关键词：

crystallization temperature; fixed oxide charge density; HfAlO gate dielectrics; mobility; poly-Si gate electrode; thermal stability;

D O I：

10.1109/LED.2003.816578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermally stable, high-quality ultrathin (EOT 13 Angstrom) CVD HfAlO gate dielectrics with poly-Si gate electrode have been investigated for the first time. Results, demonstrate that while in situ doping with Al significantly increases the crystallization temperature of HfO2 no to 900 degreesC and improves its thermal stability, it also introduces. negative fixed oxide charges due to Al accumulation at the HfAlO-Si interface, resulting in mobility degradation. The effects of Al concentration on crystallization temperature, fixed oxide charge density, and mobility degradation in HfAlO have been characterized and correlated.

引用

页码：556 / 558

页数：3

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