Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization

被引：27

作者：

Hsu, YC ^{[1
]}

Shao, TL ^{[1
]}

Yang, CJ ^{[1
]}

Chen, C ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 11期

关键词：

electromigration; flip chip; under-bump metallization; BT board; current crowding; intermetallic compounds;

D O I：

10.1007/s11664-003-0015-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the electromigration-induced failures of SnAg3.8Cu0.7 flip-chip solder joints. An under-bump metallization (UBM) of a Ti/Cr-Cu/Cu trilayer was deposited on the chip side, and a Cu/Ni(P)/Au pad was deposited on the BT board side. Electromigration damages were observed in the bumps under a current density of 2 x 10(4) A/cm(2) and 1 x 10(4) A/cm(2) at 100 degreesC and 150 degreesC. The failures were found to be at the cathode/chip side, and the current crowding effect played an important role in the failures. Copper atoms were found to move in the direction of the electron flow to form intermetallic compounds (IMCs) at the interface of solder and pad metallization as a result of current stressing.

引用

页码：1222 / 1227

页数：6

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