Single crystal growth of Si1-xGex by the Czochralski technique

被引：111

作者：

Abrosimov, NV ^{[1
]}

Rossolenko, SN ^{[1
]}

Alex, V ^{[1
]}

Gerhardt, A ^{[1
]}

Schroder, W ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)00036-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(111)- and (100)-Si1-xGex single crystals (0 < x < 0.1) with diameters of up to 48 mm were grown by Czochralski technique using a crystal puller with resistance heating. An automated control system based on crystal weighing has been developed. Software provides feedback control as well as the program changes of some process parameters to optimize crystal growth conditions. Ge distribution and crystal quality were investigated by infrared transmission measurements at the absorption edge and X-ray Lang topography, respectively.

引用

页码：657 / 662

页数：6

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