Technique to measure an ion track profile

被引：13

作者：

Musseau, O ^{[1
]}

Ferlet-Cavrois, V

Campbell, AB

Knudson, AR

Buchner, S

Fischer, B

Schlögl, M

机构：

[1] CEA, Bruyeres Le Chatel, France

[2] USN, Res Lab, Washington, DC 20375 USA

[3] SFA Inc, Landover, MD 20785 USA

[4] GSI Darmstadt, D-6100 Darmstadt, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期

关键词：

D O I：

10.1109/23.736498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of the radial density distribution of carriers generated in a single ion track have been observed in thin silicon detectors. These devices have been irradiated with either an ion microbeam at low energy or a high-energy standard ion beam. We describe the mode of operation of the tested structure, and propose an interpretation of the experimental charge collection data to extract information on the ion track profile. Experimental results are compared to 3D simulations and simplified analytical profiles.

引用

页码：2563 / 2570

页数：8

共 26 条

[1]

ANGERT N, 1996, P 7 INT S ADV NUCL E, P47

[2] CHARGE COLLECTION IN TEST STRUCTURES [J].