Zn0.97Zr0.03O-TFT fabricated by sol-gel method and its application for active matrix LCDs

被引：4

作者：

Chiang, Shin-Chuan ^{[1
]}

Yu, Chin-Chih ^{[1
]}

Chang, Fan-Wei ^{[1
]}

Liang, Shuo-Wei ^{[1
]}

Tsai, Chia-Hao ^{[1
]}

Chuang, Bor-Chuan ^{[1
]}

Tsay, Chien-Yie ^{[2
]}

机构：

[1] Taiwan TFT LCD Assoc, Res Alliance, Hsinchu, Taiwan

[2] Feng Chia Univ, Dept Mater Sci Engn, Taichung, Taiwan

来源：

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷

关键词：

D O I：

10.1889/1.3069347

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, Zn0.97Zr0.03O thin films were prepared by sol-gel method and TFTs with Zn0.97Zr0.03O active channel layer were fabricated. Field effect mobility and threshold voltage of the Zn0.97Zr0.03O-TFT are 0.0042 cm(2)/V-sec and 24.5 V, respectively. In addition, a 4.1 '' diagonal QVGA AM-LCD driven by Zn0.97Zr0.30-TFT has been successfully developed.

引用

页码：1188 / +

页数：2

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