Blue-, green-, and red-light emission from Si+-implanted thermal SiO2 films on crystalline silicon

被引：72

作者：

Liao, LS

Bao, XM

Li, NS

Zheng, XQ

Min, NB

机构：

[1] NANJING UNIV,DEPT PHYS,NANJING 210093,PEOPLES R CHINA

[2] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,PEOPLES R CHINA

来源：

JOURNAL OF LUMINESCENCE | 1996年 / 68卷 / 2-4期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0022-2313(96)00023-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Three primary color emission bands, 467 nm (similar to 2.7 eV), 540 nm (similar to 2.3 eV), and 680 nm (similar to 1.8 eV), were observed from Si+-implanted thermal SiO2 films on crystalline Si under ultraviolet excitation at room temperature. The blue emission is caused by oxygen vacancies in the films, and the green emission may also be caused by oxygen vacancies. The red emission, observed in 1100 degrees C annealed samples, is due to nanocrystalline Si precipitation.

引用

收藏

页码：199 / 204

页数：6

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