Solution growth of ZnTe single crystals by the vertical Bridgman method using a hetero-seeding technique

被引：21

作者：

Seki, Y ^{[1
]}

Sato, K ^{[1
]}

Oda, O ^{[1
]}

机构：

[1] JAPAN ENERGY CORP,MAT & COMPONENTS LAB,TODA,SAITAMA 335,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 171卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(96)00687-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnTe single crystals were grown by the solution growth method using a Te solvent. The growth has been performed in a vertical Bridgman arrangement. As the seeding material, (0001) oriented sapphire substrates with a similar diameter as that of the ZnTe crystals to be grown have been applied. ZnTe single crystals with a diameter of 21 mm could successfully be grown.

引用

页码：32 / 38

页数：7

共 24 条

[1] CHARACTERIZATION OF 100-MM DIAMETER CDZNTE SINGLE-CRYSTALS GROWN BY THE VERTICAL GRADIENT FREEZING METHOD [J].

ASAHI, T ;

ODA, O ;

TANIGUCHI, Y ;

KOYAMA, A .

JOURNAL OF CRYSTAL GROWTH, 1995, 149 (1-2) :23-29

[2] CRYSTALLOGRAPHIC TILTING OF HETEROEPITAXIAL LAYERS [J].

AYERS, JE ;

GHANDHI, SK ;

SCHOWALTER, LJ .

JOURNAL OF CRYSTAL GROWTH, 1991, 113 (3-4) :430-440

[3] GROWTH AND CHARACTERIZATION OF SUBSTRATE-QUALITY ZNSE SINGLE-CRYSTALS USING SEEDED PHYSICAL VAPOR TRANSPORT [J].

CANTWELL, G ;

HARSCH, WC ;

COTAL, HL ;

MARKEY, BG ;

MCKEEVER, SWS ;

THOMAS, JE .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2931-2936

[4] VERTICAL BRIDGMAN GROWTH AND CHARACTERIZATION OF LARGE-DIAMETER SINGLE-CRYSTAL CDTE [J].

CASAGRANDE, LG ;

DIMARZIO, D ;

LEE, MB ;

LARSON, DJ ;

DUDLEY, M ;

FANNING, T .

JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :576-581

[5] SHALLOW ACCEPTOR STATES IN ZNTE AND CDTE [J].

CROWDER, BL ;

HAMMER, WN .

PHYSICAL REVIEW, 1966, 150 (02) :541-&

[6] TILT GROWTH OF CDTE EPILAYERS ON SAPPHIRE SUBSTRATES BY MOCVD [J].

EBE, H ;

SAWADA, A ;

MARUYAMA, K ;

NISHIJIMA, Y ;

SHINOHARA, K ;

TAKIGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :718-722

[7] A REVIEW OF THE BULK GROWTH OF HIGH BAND-GAP II-VI COMPOUNDS [J].

FITZPATRICK, BJ .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :106-110

[8] THE 1ST COMPACT BLUE-GREEN DIODE-LASERS - WIDE-BANDGAP-II-VI SEMICONDUCTORS COME OF AGE [J].

GUNSHOR, RL ;

NURMIKKO, AV .

PROCEEDINGS OF THE IEEE, 1994, 82 (10) :1503-1513

[9]

IODKO VN, 1995, MATER SCI FORUM, V182-1, P353, DOI 10.4028/www.scientific.net/MSF.182-184.353

[10] VAPOR-PHASE EPITAXY OF CDTE ON SAPPHIRE AND GAAS [J].

KASUGA, M ;

FUTAMI, H ;

IBA, Y .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :711-717

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