Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)4Ti3O12 films

We have fabricated and characterized Pt/(Bi, La)(4)Ti3O12(BLT)/Pt/Ti/SiO2/Si metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures for ferroelectric-gate transistor applications. It is demonstrated that BLT films fabricated using the metalorganic decomposition (MOD) technique at 750 degreesC have excellent, electrical properties. Remanent polarization P-2(r) as large as 30 muC/cm(2) can be obtained. It is also shown that in the memory window increases with the area ratio S-F : S-M of the MFMIS structure and that a large memory window (3V) can, be obtained for a voltage sweep of +/- 5V for MFMIS structures with an area ratio S-F : S-M of 1 : 15. In addition, it is demonstrated that MFMIS structures with an area ratio S-F : S-M of 1 : 15 have good data retention characteristics.