Nonpolar 4H-AlN grown on 4H-SiC (1(1)over-bar00) with reduced stacking fault density realized by persistent layer-by-layer growth

被引：9

作者：

Horita, Masahiro ^{[1
]}

Kimoto, Tsunenobu ^{[1
,2
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2976559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar AlN layers were grown on 4H-SiC (1 (1) over bar 00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (1 (1) over bar 00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1 x 10(6) cm(-1). (C) 2008 American Institute of Physics.

引用

页数：3

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