Physical and chemical tuning of two-dimensional transition metal dichalcogenides

被引：730

作者：

Wang, Haotian ^{[1
]}

Yuan, Hongtao ^{[1
,2
,3
]}

Hong, Seung Sae ^{[1
]}

Li, Yanbin ^{[2
]}

Cui, Yi ^{[2
,3
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA

来源：

CHEMICAL SOCIETY REVIEWS | 2015年 / 44卷 / 09期

基金：

美国国家科学基金会;

关键词：

ACTIVE EDGE SITES; FIELD-EFFECT TRANSISTORS; MOS2 ATOMIC LAYERS; SINGLE-LAYER; HYDROGEN EVOLUTION; MOLYBDENUM-DISULFIDE; LARGE-AREA; BORON-NITRIDE; ELECTRONIC-PROPERTIES; VALLEY POLARIZATION;

D O I：

10.1039/c4cs00287c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The development of two-dimensional (2D) materials has been experiencing a renaissance since the adventure of graphene. Layered transition metal dichalcogenides (TMDs) are now playing increasingly important roles in both fundamental studies and technological applications due to their wide range of material properties from semiconductors, metals to superconductors. However, a material with fixed properties may not exhibit versatile applications. Due to the unique crystal structures, the physical and chemical properties of 2D TMDs can be effectively tuned through different strategies such as reducing dimensions, intercalation, heterostructure, alloying, and gating. With the flexible tuning of properties 2D TMDs become attractive candidates for a variety of applications including electronics, optoelectronics, catalysis, and energy.

引用

页码：2664 / 2680

页数：17

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