Magnetic and electric properties of transition-metal-doped ZnO films

被引：1914

作者：

Ueda, K ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 07期

关键词：

D O I：

10.1063/1.1384478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

3d-transition-metal-doped ZnO films (n-type Zn1-xMxO (x=0.05-0.25): M=Co, Mn, Cr, Ni) are formed on sapphire substrates using a pulsed-laser deposition technique, and their magnetic and electric properties are examined. The Co-doped ZnO films showed the maximum solubility limit. Some of the Co-doped ZnO films exhibit ferromagnetic behaviors with the Curie temperature higher than room temperature. The magnetic properties of Co-doped ZnO films depend on the concentration of Co ions and carriers. (C) 2001 American Institute of Physics.

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页码：988 / 990

页数：3

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