Tunable InAs quantum-dot lasers grown on (100) InP

被引：5

作者：

Allen, CN ^{[1
]}

Poole, PJ

Marshall, P

Raymond, S

Fafard, S

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Alcatel Optron, Quebec City, PQ J8T 8R1, Canada

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

quantum dot lasers; photoluminescence; electroluminescence;

D O I：

10.1016/S0026-2692(03)00037-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP were grown on (100) InP substrate to form a laser diode. Two methods were used to achieve tuning: changing the laser cavity length or varying the temperature. Stimulated emission between similar to1.51 and similar to1.64 mum was observed depending on the cavity length and the QD barrier height. The threshold current density was decreased for longer cavities to a value as low as 49 A/cm(2) at 77 K. The relation between temperature and lasing peak wavelength was measured to be similar to0.21 nm/K leading to room temperature lasing at similar to1.61 mum. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：415 / 417

页数：3

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