High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

被引：49

作者：

Goel, N.

Majhi, P.

Tsai, W.

Warusawithana, M.

Schlom, D. G.

Santos, M. B.

Harris, J. S.

Nishi, Y.

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[3] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2776846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure and electrical properties of LaAlO3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors deposited by molecular-beam epitaxy were investigated. Transmission electron microscopy revealed a sharp interface between the dielectric and InGaAs. Postdeposition annealing at 440-500 degrees C significantly reduced the capacitive equivalent thickness and frequency dispersion. A hysteresis of 15 mV-0.1 V, a dielectric permittivity of 17 +/- 1, and a dielectric strength of similar to 4.3 MV/cm were measured. Additionally, a high loss in the parallel conductance and gate-bias independence in the inversion region was observed, implying the fast generation rate of minority carriers in In0.53Ga0.47As. (c) 2007 American Institute of Physics.

引用

页数：3

共 28 条

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