Radiation hardness studies of the front-end ASICs for the optical links of the ATLAS SemiConductor Tracker

被引：33

作者：

White, DJ

Dowell, JD

Mahout, G

Jovanovic, P

Mandic, I

Weidberg, AR

机构：

[1] Univ Oxford, Nucl Phys Lab, Dept Particle & Nucl Phys, Oxford OX1 3RH, England

[2] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England

[3] Univ Birmingham, Birmingham B15 2TT, W Midlands, England

[4] Inst Josef Stefan, Ljubljana, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 457卷 / 1-2期

关键词：

LHC; data transmission; ASICs; radiation tolerance;

D O I：

10.1016/S0168-9002(00)00763-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Studies have been performed on the effects of radiation on ASICs incorporating bipolar npn transistors in the AMS 0.8 mum BiCMOS process. Radiation effects are reviewed and the approach used to achieve radiation tolerant ASICs is described, The radiation tests required to validate the ASICs for use in the ATLAS detector at the CERN Large Hadron Collider are discussed. The results demonstrate that they are sufficiently radiation tolerant for use in the ATLAS SemiConductor Tracker. (C) 2001 Elsevier Science B.V. Ail rights reserved.

引用

页码：369 / 377

页数：9

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