Band structure engineering of ZnO1-xSex alloys

被引：55

作者：

Mayer, Marie A. ^{[1
,2
]}

Speaks, Derrick T. ^{[1
,2
]}

Yu, Kin Man ^{[1
]}

Mao, Samuel S. ^{[3
,4
]}

Haller, Eugene E. ^{[1
,2
]}

Walukiewicz, Wladek ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Environm Energy Technol Div, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

OXIDE SEMICONDUCTORS;

D O I：

10.1063/1.3464323

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

ZnO1-xSex alloys with Se substitutional composition x < 0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO1-xSex alloys. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464323]

引用

页数：3

共 13 条

[1]

Valence-band anticrossing in mismatched III-V semiconductor alloys [J].

Alberi, K. ;

Wu, J. ;

Walukiewicz, W. ;

Yu, K. M. ;

Dubon, O. D. ;

Watkins, S. P. ;

Wang, C. X. ;

Liu, X. ;

Cho, Y. -J. ;

Furdyna, J. .

PHYSICAL REVIEW B, 2007, 75 (04)

[2]

Temperature dependence of the band gap of ZnSe1-xOx [J].

Broesler, R. ;

Haller, E. E. ;

Walukiewicz, W. ;

Muranaka, T. ;

Matsumoto, T. ;

Nabetani, Y. .

APPLIED PHYSICS LETTERS, 2009, 95 (15)

[3]

OPTICAL PROPERTIES OF SILVER AND CUPROUS HALIDES [J].

CARDONA, M .

PHYSICAL REVIEW, 1963, 129 (01) :69-+

[4]

Electronic structure of Ga1-xMnxAs analyzed according to hole-concentration-dependent measurements [J].

Mayer, M. A. ;

Stone, P. R. ;

Miller, N. ;

Smith, H. M., III ;

Dubon, O. D. ;

Haller, E. E. ;

Yu, K. M. ;

Walukiewicz, W. ;

Liu, X. ;

Furdyna, J. K. .

PHYSICAL REVIEW B, 2010, 81 (04)

[5]

Defects in ZnO [J].

McCluskey, M. D. ;

Jokela, S. J. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)

[6]

OXIDE SEMICONDUCTORS IN PHOTOELECTROCHEMICAL CONVERSION OF SOLAR-ENERGY [J].

SCAIFE, DE .

SOLAR ENERGY, 1980, 25 (01) :41-54

[7]

Band anticrossing in GaInNAs alloys [J].

Shan, W ;

Walukiewicz, W ;

Ager, JW ;

Haller, EE ;

Geisz, JF ;

Friedman, DJ ;

Olson, JM ;

Kurtz, SR .

PHYSICAL REVIEW LETTERS, 1999, 82 (06) :1221-1224

[8]

On the optical band gap of zinc oxide [J].

Srikant, V ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5447-5451

[9]

Valence band hybridization in N-rich GaN1-xAsx alloys -: art. no. 115214 [J].

Wu, J ;

Walukiewicz, W ;

Yu, KM ;

Denlinger, JD ;

Shan, W ;

Ager, JW ;

Kimura, A ;

Tang, HF ;

Kuech, TF .

PHYSICAL REVIEW B, 2004, 70 (11) :115214-1

[10]

Band structure of highly mismatched semiconductor alloys: Coherent potential approximation [J].

Wu, J ;

Walukiewicz, W ;

Haller, EE .

PHYSICAL REVIEW B, 2002, 65 (23) :1-4

← 1 2 →