Temperature dependence of the band gap of ZnSe1-xOx

被引：37

作者：

Broesler, R. ^{[1
,2
]}

Haller, E. E. ^{[1
,2
]}

Walukiewicz, W. ^{[1
]}

Muranaka, T. ^{[3
]}

Matsumoto, T. ^{[3
]}

Nabetani, Y. ^{[3
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Yamanashi, Dept Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

关键词：

ALLOYS;

D O I：

10.1063/1.3242026

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe1-xOx films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242026]

引用

页数：3

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