Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs

被引：112

作者：

Suemune, I ^{[1
]}

Uesugi, K

Walukiewicz, W

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1322633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed a significant reduction in the temperature dependence of the absorption-edge energy in GaNxAs1-x alloys with x <0.04. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption-edge energy. We also compare the parameters that determine the temperature dependence of the band-gap energies in GaNAs and GaInNAs alloys. (C) 2000 American Institute of Physics. [S0003-6951(00)00545-3].

引用

页码：3021 / 3023

页数：3

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