Grown-in lattice defects and diffusion in Czochralski-grown germanium

被引：20

作者：

Vanhellemont, J ^{[1
]}

De Gryse, O

Hens, S

Vanmeerbeek, P

Poelman, D

Clauws, P

Simoen, E

Claeys, C

Romandic, I

Theuwis, A

Raskin, G

Vercammen, H

Mijlemans, P

机构：

[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[4] Umicore Electro Opt Mat, B-2250 Olen, Belgium

来源：

DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII | 2004年 / 230卷

关键词：

carbon; copper; diffusion; dislocations; germanium; hydrogen; iron; nickel; nitrogen; oxygen; point defects; vacancies;

D O I：

10.4028/www.scientific.net/DDF.230-232.149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A renewed interest exists for the application of germanium as active device layer in advanced nano-electronics applications. In the present paper a brief overview is given of the present state of knowledge on grown-in lattice defects in germanium and the diffusion of point defects relevant for the application of germanium based substrates in silicon technology.

引用

页码：149 / 176

页数：28

共 111 条

[1] Epitaxial silicon and germanium on buried insulator heterostructures and devices [J].