Noise characteristics of transistors fabricated in an advanced silicon bipolar technology

被引：6

作者：

Aufinger, K ^{[1
]}

Bock, J ^{[1
]}

Meister, TF ^{[1
]}

Popp, J ^{[1
]}

机构：

[1] LOEPOLD FRANZENS UNIV, INST THEORET PHYS, INNSBRUCK, AUSTRIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 09期

关键词：

D O I：

10.1109/16.535346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF noise of transistors fabricated in an advanced silicon bipolar technology is investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. Reasonable agreement is found without any fitting of model parameters to the measured noise characteristics. The potential of the investigated technology for low-noise applications is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz.

引用

页码：1533 / 1538

页数：6

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