Isotope effects on the optical spectra of semiconductors

被引:373
作者
Cardona, M
Thewalt, MLW
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
关键词
D O I
10.1103/RevModPhys.77.1173
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available "off the shelf" at affordable prices. Using these materials, single crystals of many semiconductors have been grown and the dependence of their physical properties on isotopic composition has been investigated. The most conspicuous effects observed have to do with the dependence of phonon frequencies and linewidths on isotopic composition. These affect the electronic properties of solids through the mechanism of electron-phonon interaction, in particular, in the corresponding optical excitation spectra and energy gaps. This review contains a brief introduction to the history, availability, and characterization of stable isotopes, including their many applications in science and technology. It is followed by a concise discussion of the effects of isotopic composition on the vibrational spectra, including the influence of average isotopic masses and isotopic disorder on the phonons. The final sections deal with the effects of electron-phonon interaction on energy gaps, the concomitant effects on the luminescence spectra of free and bound excitons, with particular emphasis on silicon, and the effects of isotopic composition of the host material on the optical transitions between the bound states of hydrogenic impurities.
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收藏
页码:1173 / 1224
页数:52
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共 237 条
[71]  
Harrison WA., 1989, Electronic structure and properties of solids. The physics of the chemical bond
[72]   LATTICE-DYNAMICS AND RAMAN-SPECTRA OF ISOTOPICALLY MIXED DIAMOND [J].
HASS, KC ;
TAMOR, MA ;
ANTHONY, TR ;
BANHOLZER, WF .
PHYSICAL REVIEW B, 1992, 45 (13) :7171-7182
[73]   Lattice isotope effects on optical transitions in silicon [J].
Hayama, S ;
Davies, G ;
Tan, J ;
Coutinho, J ;
Jones, R ;
Itoh, KM .
PHYSICAL REVIEW B, 2004, 70 (03) :035202-1
[74]   Photoluminescence studies of implantation damage centers in 30Si [J].
Hayama, S ;
Davies, G ;
Itoh, KM .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (03) :1754-1756
[75]   EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].
HAYNES, JR .
PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363
[76]   THEORY OF ISOTOPE-SHIFT FOR ZERO-PHONON OPTICAL-TRANSITIONS AT TRAPS IN SEMICONDUCTORS [J].
HEINE, V ;
HENRY, CH .
PHYSICAL REVIEW B, 1975, 11 (10) :3795-3803
[77]   Isotope effects on the optical phonons of YBa2Cu3O7: Eigenvector and infrared charge determination [J].
Henn, R ;
Strach, T ;
Schonherr, E ;
Cardona, M .
PHYSICAL REVIEW B, 1997, 55 (05) :3285-3296
[78]   1ST-ORDER RAMAN-SPECTRUM OF DIAMOND AT HIGH-TEMPERATURES [J].
HERCHEN, H ;
CAPPELLI, MA .
PHYSICAL REVIEW B, 1991, 43 (14) :11740-11744
[79]   LATTICE VIBRATIONAL SPECTRUM OF GERMANIUM [J].
HERMAN, F .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :405-418
[80]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919