Isotope effects on the optical spectra of semiconductors

被引:373
作者
Cardona, M
Thewalt, MLW
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
关键词
D O I
10.1103/RevModPhys.77.1173
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available "off the shelf" at affordable prices. Using these materials, single crystals of many semiconductors have been grown and the dependence of their physical properties on isotopic composition has been investigated. The most conspicuous effects observed have to do with the dependence of phonon frequencies and linewidths on isotopic composition. These affect the electronic properties of solids through the mechanism of electron-phonon interaction, in particular, in the corresponding optical excitation spectra and energy gaps. This review contains a brief introduction to the history, availability, and characterization of stable isotopes, including their many applications in science and technology. It is followed by a concise discussion of the effects of isotopic composition on the vibrational spectra, including the influence of average isotopic masses and isotopic disorder on the phonons. The final sections deal with the effects of electron-phonon interaction on energy gaps, the concomitant effects on the luminescence spectra of free and bound excitons, with particular emphasis on silicon, and the effects of isotopic composition of the host material on the optical transitions between the bound states of hydrogenic impurities.
引用
收藏
页码:1173 / 1224
页数:52
相关论文
共 237 条
[81]   ISOTOPE DEPENDENCE OF THE LATTICE-CONSTANT OF DIAMOND [J].
HOLLOWAY, H ;
HASS, KC ;
TAMOR, MA ;
ANTHONY, TR ;
BANHOLZER, WF .
PHYSICAL REVIEW B, 1991, 44 (13) :7123-7126
[82]   INFRARED ABSORPTION OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
PHYSICAL REVIEW, 1957, 107 (04) :966-972
[83]   Effect of isotopic composition on the lattice parameter of germanium measured by x-ray backscattering [J].
Hu, MY ;
Sinn, H ;
Alatas, A ;
Sturhahn, W ;
Alp, EE ;
Wille, HC ;
Shvyd'ko, YV ;
Sutter, JP ;
Bandaru, J ;
Haller, EE ;
Ozhogin, VI ;
Rodriguez, S ;
Colella, R ;
Kartheuser, E ;
Villeret, MA .
PHYSICAL REVIEW B, 2003, 67 (11) :4
[84]   ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES [J].
HYBERTSEN, MS ;
LOUIE, SG .
PHYSICAL REVIEW B, 1986, 34 (08) :5390-5413
[85]   HIGH-PURITY ISOTOPICALLY ENRICHED GE-70 AND GE-74 SINGLE-CRYSTALS - ISOTOPE-SEPARATION, GROWTH, AND PROPERTIES [J].
ITOH, K ;
HANSEN, WL ;
HALLER, EE ;
FARMER, JW ;
OZHOGIN, VI ;
RUDNEV, A ;
TIKHOMIROV, A .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (06) :1341-1347
[86]   HIGH-RESOLUTION STUDY OF THE EXCITATION SPECTRUM OF PHOSPHORUS DONORS INTRODUCED IN SILICON BY NEUTRON TRANSMUTATION [J].
JAGANNATH, C ;
GRABOWSKI, ZW ;
RAMDAS, AK .
SOLID STATE COMMUNICATIONS, 1979, 29 (04) :355-359
[87]   Dependence of the ionization energy of shallow donors and acceptors in silicon on the host isotopic mass [J].
Karaiskaj, D ;
Meyer, TA ;
Thewalt, MLW ;
Cardona, M .
PHYSICAL REVIEW B, 2003, 68 (12)
[88]   Impurity absorption spectroscopy in 28Si:: The importance of inhomogeneous isotope broadening -: art. no. 186402 [J].
Karaiskaj, D ;
Stotz, JAH ;
Meyer, T ;
Thewalt, MLW ;
Cardona, M .
PHYSICAL REVIEW LETTERS, 2003, 90 (18) :4
[89]   Intrinsic acceptor ground state splitting in silicon: An isotopic effect [J].
Karaiskaj, D ;
Thewalt, MLW ;
Ruf, T ;
Cardona, M ;
Konuma, M .
PHYSICAL REVIEW LETTERS, 2002, 89 (01)
[90]   Origin of the residual acceptor ground-state splitting in silicon [J].
Karaiskaj, D ;
Kirczenow, G ;
Thewalt, MLW ;
Buczko, R ;
Cardona, M .
PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4