Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres

被引：4

作者：

Kuznetsov, AY

Radamson, HH

Svensson, BG

Ni, WX

Hansson, GV

Larsen, AN

机构：

[1] Royal Inst Technol, Semicond Lab, SE-16440 Kista, Sweden

[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

[3] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus, Denmark

[4] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia

来源：

PHYSICA SCRIPTA | 1999年 / T79卷

关键词：

D O I：

10.1238/Physica.Topical.079a00202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of oxidation of a Si-cap layer on the thermal stability of Si/Si0.863Ge0.137/Si heterostructures is investigated by high resolution X-ray diffraction. The role of the surface, modification is extracted by comparison of dry oxygen and inert (nitrogen) ambient anneals at 810 and 900 degrees C. Anomalous strain relaxation was observed in the sample oxidized at 810 degrees C. It is hypothesized that the effect of anomalous strain evolution deals with the enhanced surface diffusion and roughening at the Si/SiGe interface.

引用

页码：202 / 205

页数：4

共 17 条

[1]

DEAL BE, 1995, J APPL PHYS, V36, P3710

[2] X-RAY-DIFFRACTION FROM LOW-DIMENSIONAL STRUCTURES [J].