EFFECTS OF SI THERMAL-OXIDATION ON B DIFFUSION IN SI AND STRAINED SI1-XGEX LAYERS

被引：24

作者：

KUO, P ^{[1
]}

HOYT, JL ^{[1
]}

GIBBONS, JF ^{[1
]}

TURNER, JE ^{[1
]}

LEFFORGE, D ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.115281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon thermal oxidation was used to characterize the interaction of Si interstitials with a Si1-xGe(x) layer and with B in Si1-xGex. Diffusion of B in a Si marker layer, positioned under a Si1-xGe(x) layer, was monitored as excess Si interstitials were injected into the bulk by the oxidation of the Si capping layer (T=850 degrees C, t=18 min). The Si1-xGex layer did not affect the oxidation-enhanced diffusion of B in the Si marker layer. Hence, Si1-xGex (x<0.30) does not appear to be a strong sink for Si interstitials. In addition, the enhancement from Si thermal oxidation (T=800 degrees C, t=60 min) of the measured B diffusivity in Si1-xGex is similar to that in Si. This indicates that, as in Si, the mechanism for B diffusion in Si1-xGex (x<0.18) primarily involves Si interstitials. (C) 1995 American Institute of Physics.

引用

页码：706 / 708

页数：3

共 14 条

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