Experimental and theoretical studies of a pulsed microwave excited Ar/CF4 plasma

被引:5
作者
Baeva, M [1 ]
Luo, X [1 ]
Schafer, JH [1 ]
Uhlenbusch, J [1 ]
Zhang, Z [1 ]
机构
[1] Univ Dusseldorf, Inst Laser & Plasma Phys, D-40225 Dusseldorf, Germany
关键词
pulsed microwave discharge; plasma ignition; Ar/CF4; mixture; plasma processing; etching; chemical kinetics; modeling;
D O I
10.1023/A:1021803114922
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
The present work deals with a pulsed microwave discharge in an Ar/CF4 gas mixture under a low pressure (1-10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma-wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a a duration of 50-200 mu s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameter sand rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CFx(x = 2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.
引用
收藏
页码:429 / 446
页数:18
相关论文
共 14 条
[1]   ELECTRON-IMPACT COLLISION STRENGTHS FOR NEUTRAL FLUORINE [J].
BALIYAN, KS ;
BHATIA, AK .
PHYSICAL REVIEW A, 1994, 50 (04) :2981-2988
[2]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[3]   THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].
FLAMM, DL ;
DONNELLY, VM ;
MUCHA, JA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639
[4]  
Hayashi M, 1987, SWARM STUDIES INELAS
[5]  
HAYASHI M, 1996, COMMUNICATION
[6]   SILICON ETCHING MECHANISM AND ANISOTROPY IN CF4+O2 PLASMA [J].
LEE, YH ;
CHEN, MM .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5966-5973
[7]  
LIEBERMAN MA, 1994, PRINCIPLES PLASMA DI
[8]  
MacDonald A. D., 1966, Microwave Breakdown in Gases
[9]   A CRITICAL-EVALUATION OF LOW-ENERGY ELECTRON-IMPACT CROSS-SECTIONS FOR PLASMA PROCESSING MODELING .2. CF4, SIH4, AND CH4 [J].
MORGAN, WL .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1992, 12 (04) :477-493
[10]   A MODEL OF THE CHEMICAL PROCESSES OCCURRING IN CF-4/O2 DISCHARGES USED IN PLASMA-ETCHING [J].
PLUMB, IC ;
RYAN, KR .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1986, 6 (03) :205-230