Dielectric and ferroelectric properties of highly (100)-oriented (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films grown on LaNiO3/γ-Al2O3/Si substrates by chemical solution deposition

被引：63

作者：

Guo, Yiping ^{[1
]}

Akai, Daisuke ^{[2
]}

Sawada, Kazauki ^{[3
]}

Ishida, Makoto ^{[3
]}

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab MMCs Mat Sci & Engn, Shanghai 200030, Peoples R China

[2] Toyohashi Univ Technol, Venture Business Lab, Tempaku Cho, Toyohashi 4418580, Japan

[3] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tempaku Cho, Toyohashi 4418580, Japan

来源：

SOLID STATE SCIENCES | 2008年 / 10卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

NBT-BT; lead-free; thin film; chemical solution deposition;

D O I：

10.1016/j.solidstatesciences.2007.10.026

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A (Na0.5Bi0.5)(0.94)Ba0.06TiO3 chemical solution was prepared by using barium acetate, nitrate of sodium, nitrate of bismuth, and Ti-isopropoxide as raw materials, A white precipitation appeared during the preparation was analyzed to be Ba(NO3)(2). We found that ethanolamine is a very effective coordinating ligand of Ba2+. A transparent and stable (Na0.5Bi0.5)(0.94)Ba0.06TiO3 precursor chemical solution has been achieved by using ethanolamine as a ligand of Ba2+. (Na0.5Bi0.5)(0.94)Ba0.06TiO3 films were grown on LaNiO3/gamma-Al2O3/Si substrates. Highly (100)-oriented (Na0.5Bi0.5)(0.94)Ba0.06TiO3 films were obtained in this work due to lattice match growth. The dielectric, ferroelectric and insulative characteristics against applied field were studied. The conduction current shows an Ohmic conduction behavior at lower voltages and space-charge-limited behavior at higher voltages, respectively. These results indicate that, the (Na0.5Bi0.5)(0.94)Ba0.06TiO3 film is a promising lead-free ferroelectric film. (C) 2007 Elsevier Masson SAS. All rights reserved.

引用

页码：928 / 933

页数：6

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