Characterization of planar semipolar gallium nitride films on spinel substrates

被引：132

作者：

Baker, TJ ^{[1
]}

Haskell, BA

Wu, F

Fini, PT

Speck, JS

Nakamura, S

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, UCSB Grp, ERATO JST, NICP, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期

关键词：

semipolar; GaN; (10(1)over-bar1); (10(1)over-bar(1)over-bar); (10(1)over-bar3); (10(1)over-bar(3)over-bar);

D O I：

10.1143/JJAP.44.L920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy. This is the first report of high quality semipolar GaN films that could be used for device growth. Planar films of (1011)GaN have been grown on (100)MgAl2O4 spinel, and planar films of (10 (13) over bar )GaN have been grown on (110)MgAl2O4 spinet. The in-plane epitaxial relationship for (10 (11) over bar )GaN on (100) spinet was [10 (12) over bar](GaN) vertical bar vertical bar [011](spinel) and [1 (2) over bar 10](GaN) vertical bar vertical bar [0 (1) over bar1](spinel). The in-plane epitaxial relationship for (10 (13) over bar )GaN on (110) spinel was [30 (32) over bar](GaN) vertical bar vertical bar [001](spinel) and [1 (2) over bar 10](GaN) vertical bar vertical bar [(1) over bar0](spinel).

引用

页码：L920 / L922

页数：3

共 23 条

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