Defect reduction in (1(1)over-bar00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy -: art. no. 111917

被引：115

作者：

Haskell, BA ^{[1
]}

Baker, TJ

McLaurin, MB

Wu, F

Fini, PT

DenBaars, SP

Speck, JS

Nakamura, S

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, UCSB Grp, JST, ERATO,NICP, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1866225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports on extended defect density reduction in m-plane (1 (1) over bar 00) GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase epitaxy. Several dielectric mask patterns were used to produce 10 to 100 mu m-thick, partially and fully coalesced nonpolar GaN films. X-ray rocking curves indicated the films were free of wing tilt. Transmission electron microscopy showed that basal plane stacking fault (SF) and threading dislocation (TD) densities decreased from 10(5) cm(-1) and 10(9) cm(-2), respectively, less than 3x10(3) cm(-1) and similar to 5x10(6) cm(-2), respectively, in the Ga-face (0001) wing of the LEO films. SFs persisted in < 0001 >-oriented stripe LEO films, though TD reduction was observed in the windows and wings. Band-edge cathodoluminescence intensity increased 2 to 5 times in the wings compared to the windows depending on the stripe orientation. SFs in the low TD density wings of < 0001 >-stripe films did not appear to act as nonradiative recombination centers. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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