A new generation-recombination model for device simulation including the Poole-Frenkel effect and phonon-assisted tunnelling

被引：69

作者：

Lui, OKB

Migliorato, P

机构：

[1] University of Cambridge, Department of Engineering, Trumpington Street

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(96)00148-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline silicon transistors (poly-Si TFTs) are very attractive-devices for large scale integration (LSI) on glass with regards to reliability, compactness and low cost. The correct modelling of leakage currents in poly-Si TFTs is important for designers and technologists. Amongst other problems, a prevailing problem is the anomalous leakage current, which can degrade the pixel voltage in an active matrix display. This paper presents a new generation-recombination (G-R) model for the leakage current which is suitable for implementation in a device simulator. (C) 1997 Elsevier Science Ltd.

引用

页码：575 / 583

页数：9

共 29 条

[1] TEMPERATURE-DEPENDENCE OF THE ANOMALOUS LEAKAGE CURRENT IN POLYSILICON-ON-INSULATOR MOSFETS [J].

BHATTACHARYA, SS ;

BANERJEE, SK ;

NGUYEN, BY ;

TOBIN, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :221-227

[2]

BROTHERTON SD, 1995, NATO ASI SERIES

[3] GRAIN-BOUNDARY STATES AND THE CHARACTERISTICS OF LATERAL POLYSILICON DIODES [J].

DEGRAAFF, HC ;

HUYBERS, M ;

DEGROOT, JG .

SOLID-STATE ELECTRONICS, 1982, 25 (01) :67-71

[4] LEAKAGE CURRENT OF UNDOPED LPCVD POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

DIMITRIADIS, CA ;

COXON, PA ;

ECONOMOU, NA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :950-956

[5] DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE [J].

FORTUNATO, G ;

MIGLIORATO, P .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1025-1027

[6]

FRENKEL J, 1938, PHYS REV, V54, P547

[7] FIELD-ENHANCED EMISSION AND CAPTURE IN POLYSILICON PN JUNCTIONS [J].

GREVE, DW ;

POTYRAJ, PA ;

GUZMAN, AM .

SOLID-STATE ELECTRONICS, 1985, 28 (12) :1255-1261

[8] NUMERICAL SIMULATIONS OF AMORPHOUS AND POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

SHAW, JG ;

LECOMBER, PG ;

WILLUMS, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2360-L2362

[9]

HURKX G, 1989, P EUROPEAN SOLID STA, P793

[10] ON THE MODELING OF TUNNELLING CURRENTS IN REVERSE-BIASED P-N-JUNCTIONS [J].

HURKX, GAM .

SOLID-STATE ELECTRONICS, 1989, 32 (08) :665-668

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